Silicon-based silicon-germanium-tin heterostructure photonics.
نویسنده
چکیده
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.
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عنوان ژورنال:
- Philosophical transactions. Series A, Mathematical, physical, and engineering sciences
دوره 372 2012 شماره
صفحات -
تاریخ انتشار 2014